Products
“GSTO” Solutions
GSS02GSAX1-W8NMI0 – GSTO SPI NAND Flash 2 Gb (3.3V, Quad/Dual/Standard SPI, 108 MHz, 2 KB page, 8-bit ECC, –40 °C to +85 °C, WSON8 8×6 mm) Key Features SPI NAND Flash 2 Gb with standard, dual, and quad I/O support Clock frequency: up to 108 MHz (432 MHz equivalent in Quad SPI) Page size: 2,048 + 64 […]
- Memory, SLC NAND
GSS01GSAX1-W8NMI0 – GSTO SPI NAND Flash 1 Gb (3.3V, Quad/Dual/Standard SPI, 108 MHz, 2 KB page, 8-bit ECC, –40 °C to +85 °C, WSON8 8×6 mm) Key Features SPI NAND Flash 1 Gb with standard, dual, and quad I/O support Clock frequency: up to 108 MHz (432 MHz equivalent in Quad SPI) Page size: 2,048 + 64 […]
- Memory, SLC NAND
GSK16GD1T1-S1D6C0 – GSTO SD 16 GB UHS-I U1 V10 Class 10 memory card (up to 81 MB/s read, 26 MB/s write, ECC, SPI/SD dual-mode, 0 °C to +70 °C operation) Key Features Compliant with SD Card Association (SDA) v6.10 & v7.0 UHS-I U1 / V10 / Class 10 speed rating Sequential performance: Read: up to 81 MB/s […]
- Memory, SD Card
GSK16GM1T1-M1NAC0 – GSTO microSD 16 GB UHS-I U1 V10 Class 10 memory card (up to 85 MB/s read, 32 MB/s write, ECC, wide compatibility, 0 °C to +70 °C operation) Key Features Compliant with SD Card Association (SDA) specification UHS-I U1 / V10 / Class 10 speed rating Sequential performance: Read: up to 85 MB/s (CrystalDiskMark) Write: […]
- Memory, SD Card
GSD04GHFB4-E3N3C0 – GSTO DDR3 4 GB 1600 MT/s DRAM module (x8 organization, 1.5 V, CL11 latency, industrial-grade reliability, 30 µ gold plating, –40 °C to +85 °C) Key Features JEDEC-compliant DDR3 SDRAM, 4 GB capacity Data rate: 1600 MT/s (DDR3-1600) Organization: 512M × 8 × 8 banks (x8) CAS latency: 11-11-11 Voltage: 1.5 V ±0.075 V 30 […]
- DRAM Module, Memory
GSD02GHFB3-E3N3C0 – GSTO DDR3 2 GB 1600 MT/s DRAM module (x8 organization, 1.5 V, 11-11-11 latency, industrial-grade reliability, 30 µ gold plating) Key Features JEDEC-compliant DDR3 SDRAM, 2 GB capacity Data rate: 1600 MT/s (DDR3-1600) Organization: 256M × 8 × 8 banks (x8) CAS latency: 11-11-11 Voltage: 1.5 V ±0.075 V 30 µ” gold-plated contacts […]
- DRAM Module, Memory
GSE32GBAE5-F5V5I0 – GSTO Industrial eMMC5.1 32 GB HS400 flash (280 MB/s read, 150 MB/s write, LDPC ECC, wide-temp –40 °C to +85 °C, industrial-grade reliability) Key Features JEDEC e.MMC 5.1 HS400 interface, backward-compatible with v4.5–v5.1 Sequential performance: up to 280 MB/s read, 150 MB/s write Random IOPS: up to 4,400 read / 2,400 write Bus widths: 1-, […]
- eMMC, Memory
GSE128AAE4-F5V5C0 – GSTO eMMC5.1 128 GB HS400 flash (270 MB/s read, 240 MB/s write, LDPC ECC, wear leveling, –25 °C to +85 °C operation) Key Features JEDEC e.MMC 5.1 compliant; backward-compatible with v4.5–v5.1 Sequential speeds: up to 270 MB/s read, 240 MB/s write (HS400 mode) Random performance: 4,200 IOPS read / 2,700 IOPS write Bus […]
- eMMC, Memory
GSE64GAAE3-F5V5C0 – GSTO eMMC5.1 64 GB HS400 flash (270 MB/s read, 210 MB/s write, LDPC ECC, wear leveling, –25 °C to +85 °C operation) Key Features JEDEC e.MMC 5.1-compliant, compatible from v4.5 to v5.1 Up to 270 MB/s sequential read, 210 MB/s sequential write (HS400 mode) Up to 4,000 IOPS read / 2,800 IOPS write random access Bus widths […]
- eMMC, Memory
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