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GSD04GHFB4-E3N3C0 – GSTO DDR3 4 GB 1600 MT/s DRAM module (x8 organization, 1.5 V, CL11 latency, industrial-grade reliability, 30 µ gold plating, –40 °C to +85 °C)

Key Features

  • JEDEC-compliant DDR3 SDRAM, 4 GB capacity
  • Data rate: 1600 MT/s (DDR3-1600)
  • Organization: 512M × 8 × 8 banks (x8)
  • CAS latency: 11-11-11
  • Voltage: 1.5 V ±0.075 V
  • 30 µ” gold-plated contacts for enhanced durability
  • Operating temperature: –40 °C to +85 °C (industrial grade)
  • RoHS & Halogen-free compliant
  • 78-ball FBGA package (9 × 13 mm)

Technical Specifications

Specification Details
Capacity 4 GB
Memory Type DDR3 SDRAM
Data Rate 1600 MT/s
Organization 512M × 8 × 8 banks
CAS Latency 11-11-11
Voltage 1.5 V ±0.075 V
Package 78-ball FBGA (9 × 13 mm)
Operating Temperature –40 °C to +85 °C
Gold Plating 30 µ”
RoHS / Halogen-Free Yes

Benefits

  • Industrial-grade reliability: Wide-temp support and robust signal integrity
  • Compact footprint: FBGA package ideal for embedded boards
  • Long-term availability: Designed for longevity in industrial supply chains
  • JEDEC-compliant: Ensures compatibility across platforms
  • Enhanced durability: 30 µ” gold plating resists corrosion and wear

Why Choose GSTO?

GSTO’s GSD04GHFB4-E3N3C0 is engineered for embedded and industrial systems requiring stable, long-life DDR3 memory. With wide-temperature support and JEDEC compliance, it’s ideal for automation, networking, and rugged computing platforms.

See other DRAM Module products from GSTO

Smartphone
Automotive
AI & IoT Devices
Networking Equipment
Industrial PC
Embedded Systems
Smart TV / Media Player
Server / Memory Module
Consumer Electronics
Storage Devices

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