Product Center
GSK16GD1T1-S1D6C0 | GSTO SD 16 GB UHS-I U1 V10 Class 10 Memory Card
GSK16GD1T1-S1D6C0 – GSTO SD 16 GB UHS-I U1 V10 Class 10 memory card (up to 81 MB/s read, 26 MB/s write, ECC, SPI/SD dual-mode, 0 °C to +70 °C operation)
Key Features
- Compliant with SD Card Association (SDA) v6.10 & v7.0
- UHS-I U1 / V10 / Class 10 speed rating
- Sequential performance:
- Read: up to 81 MB/s (CrystalDiskMark)
- Write: up to 26 MB/s (CrystalDiskMark)
- H2Test results: ~70 MB/s read, ~21 MB/s write
- Supports SD and SPI bus modes
- Built-in ECC (Error Correction Code)
- Supports single/multi-block data transfer
- Insert/remove detection and initialization protocols
- Operating temperature: 0 °C to +70 °C
- Humidity tolerance: 8%–95% RH (non-condensing)
- Shock resistance: 1,000 G | Drop test: 1.5 m
- Endurance: 10,000 mating cycles | MTBF > 200,000 hours
Technical Specifications
| Specification | Details |
|---|---|
| Capacity | 16 GB |
| Interface | SDIO / SPI |
| Speed Class | UHS-I U1 / V10 / Class 10 |
| Max Read / Write Speed | 81 MB/s / 26 MB/s (CrystalDiskMark) |
| ECC | Yes (built-in) |
| Operating Temperature | 0 °C to +70 °C |
| Humidity | 8%–95% RH (non-condensing) |
| Shock Resistance | 1,000 G |
| Drop Test | 1.5 m free fall |
| Mating Cycles | 10,000 insertions |
| MTBF | > 200,000 hours |
| Dimensions (L × W × H) | 32 mm × 24 mm × 2.1 mm |
| Packaging Type | Industrial tray (code: 0) |
Benefits
- Reliable performance: ECC and wear resistance ensure data integrity
- Broad compatibility: Works with SDIO and SPI hosts
- Durable design: Shock, UV, and drop resistant for mobile environments
- Plug-and-play: No driver required, supports hot-swap and auto-detection
- Compact & versatile: Ideal for cameras, handhelds, and embedded systems
Why Choose GSTO?
GSTO’s GSK16GD1T1-S1D6C0 delivers dependable flash storage in a full-size SD form factor. With UHS-I U1 speed and robust ECC, it’s ideal for consumer electronics, industrial handhelds, and embedded applications requiring reliable 16 GB removable storage.
Smartphone
Automotive
AI & IoT Devices
Networking Equipment
Industrial PC
Embedded Systems
Smart TV / Media Player
Server / Memory Module
Consumer Electronics
Storage Devices
Product Recommendation
GSE64GAAE3-F5V5C0 – GSTO eMMC5.1 64 GB HS400 flash (270 MB/s read, 210 MB/s write, LDPC ECC, wear leveling, –25 °C to +85 °C operation) Key Features JEDEC e.MMC 5.1-compliant, compatible from v4.5 to v5.1 Up to 270 MB/s sequential read, 210 MB/s sequential write (HS400 mode) Up to 4,000 IOPS read / 2,800 IOPS write random access Bus widths […]
- eMMC, Memory
GSE16GAAE3-F5V5C0 – GSTO eMMC5.1 16 GB HS400 flash (310 MB/s read, 200 MB/s write, LDPC ECC, wear leveling, –25 °C to +85 °C operation) Key Features Compliant with JEDEC e.MMC 5.1, backward-compatible with v4.5–v5.1 HS400 interface: up to 310 MB/s read, 200 MB/s write Random IOPS: up to 3,600 read / 2,500 write Bus widths […]
- eMMC, Memory
GSK16GM1T1-M1NAC0 – GSTO microSD 16 GB UHS-I U1 V10 Class 10 memory card (up to 85 MB/s read, 32 MB/s write, ECC, wide compatibility, 0 °C to +70 °C operation) Key Features Compliant with SD Card Association (SDA) specification UHS-I U1 / V10 / Class 10 speed rating Sequential performance: Read: up to 85 MB/s (CrystalDiskMark) Write: […]
- Memory, SD Card
GSS01GSAX1-W8NMI0 – GSTO SPI NAND Flash 1 Gb (3.3V, Quad/Dual/Standard SPI, 108 MHz, 2 KB page, 8-bit ECC, –40 °C to +85 °C, WSON8 8×6 mm) Key Features SPI NAND Flash 1 Gb with standard, dual, and quad I/O support Clock frequency: up to 108 MHz (432 MHz equivalent in Quad SPI) Page size: 2,048 + 64 […]
- Memory, SLC NAND
GSE32GAABI-F5V5C0 – GSTO eMMC5.1 32 GB HS400 flash (280 MB/s read, 150 MB/s write, LDPC ECC, wear leveling, –25 °C to +85 °C operation) Key Features JEDEC e.MMC 5.1 HS400 interface, backward-compatible with v4.5–v5.1 Sequential performance: up to 280 MB/s read, 150 MB/s write Random IOPS: up to 4,400 read / 2,400 write Bus width […]
- eMMC, Memory
GSD04GHFB4-E3N3C0 – GSTO DDR3 4 GB 1600 MT/s DRAM module (x8 organization, 1.5 V, CL11 latency, industrial-grade reliability, 30 µ gold plating, –40 °C to +85 °C) Key Features JEDEC-compliant DDR3 SDRAM, 4 GB capacity Data rate: 1600 MT/s (DDR3-1600) Organization: 512M × 8 × 8 banks (x8) CAS latency: 11-11-11 Voltage: 1.5 V ±0.075 V 30 […]
- DRAM Module, Memory