Product Center
GSS02GSAX1-W8NMI0 | GSTO SPI NAND Flash 2 Gb (3.3V, Quad I/O, Industrial Grade)
GSS02GSAX1-W8NMI0 – GSTO SPI NAND Flash 2 Gb (3.3V, Quad/Dual/Standard SPI, 108 MHz, 2 KB page, 8-bit ECC, –40 °C to +85 °C, WSON8 8×6 mm)
Key Features
- SPI NAND Flash 2 Gb with standard, dual, and quad I/O support
- Clock frequency: up to 108 MHz (432 MHz equivalent in Quad SPI)
- Page size: 2,048 + 64 bytes | Block size: 128 KB + 4 KB
- 2 KB cache buffer for fast random read
- Built-in 8-bit BCH ECC per 512 bytes
- Internal data randomization for endurance enhancement
- Advanced protection: software/hardware write-protect, OTP lock, power-down lock
- 2 KB Unique ID + 2 KB Parameter Page + 10 OTP pages
- Supply voltage: 2.7–3.6 V | Industrial temp: –40 °C to +85 °C
- Package: 8-pad WSON (8 × 6 mm), JEDEC-compliant
Technical Specifications
| Specification | Details |
|---|---|
| Density | 2 Gb (256M + 8M bytes) |
| Page / Block Size | 2,048 + 64 B / 128 KB + 4 KB |
| Interface | SPI / Dual / Quad SPI |
| Max Clock Frequency | 108 MHz (432 MHz equiv. in Quad SPI) |
| ECC | 8-bit per 512 bytes (BCH) |
| Cache Buffer | 2 KB |
| Unique ID / OTP Pages | 2 KB ID + 10 × 2 KB OTP |
| Supply Voltage (Vcc) | 2.7–3.6 V |
| Operating Temperature | –40 °C to +85 °C |
| Package | WSON8 8×6 mm |
| Data Retention | 10 years (with ECC) |
| Program / Erase Time | 450 µs / 3.5 ms (typical) |
| Read Time | 180 µs (typical) |
| MTBF | > 200,000 hours |
Benefits
- High-speed SPI NAND: Quad I/O interface enables fast boot and data access
- Robust data integrity: Built-in ECC, bad block management, and randomization
- Secure storage: OTP pages, unique ID, and write-protect mechanisms
- Industrial-grade reliability: Wide-temp support and 10-year data retention
- Compact footprint: WSON8 8×6 mm ideal for space-constrained embedded systems
Why Choose GSTO?
GSTO’s GSS02GSAX1-W8NMI0 delivers high-performance SPI NAND Flash with robust ECC and industrial-grade endurance. It’s ideal for boot code, firmware storage, and data logging in embedded systems, routers, gateways, and industrial controllers.
Smartphone
Automotive
AI & IoT Devices
Networking Equipment
Industrial PC
Embedded Systems
Smart TV / Media Player
Server / Memory Module
Consumer Electronics
Storage Devices
Product Recommendation
GSE32GAAE3-F5V5C0 – GSTO eMMC5.1 32 GB HS400 flash (280 MB/s read, 150 MB/s write, LDPC ECC, wear leveling, –25 °C to +85 °C operation) Key Features JEDEC e.MMC 5.1-compliant, backward-compatible with v4.5–v5.1 HS400 interface: up to 280 MB/s read, 150 MB/s write Random performance: up to 4,400 IOPS read / 2,400 IOPS write Bus widths […]
- eMMC, Memory
GSE64GAAE3-F5V5C0 – GSTO eMMC5.1 64 GB HS400 flash (270 MB/s read, 210 MB/s write, LDPC ECC, wear leveling, –25 °C to +85 °C operation) Key Features JEDEC e.MMC 5.1-compliant, compatible from v4.5 to v5.1 Up to 270 MB/s sequential read, 210 MB/s sequential write (HS400 mode) Up to 4,000 IOPS read / 2,800 IOPS write random access Bus widths […]
- eMMC, Memory
GSS01GSAX1-W8NMI0 – GSTO SPI NAND Flash 1 Gb (3.3V, Quad/Dual/Standard SPI, 108 MHz, 2 KB page, 8-bit ECC, –40 °C to +85 °C, WSON8 8×6 mm) Key Features SPI NAND Flash 1 Gb with standard, dual, and quad I/O support Clock frequency: up to 108 MHz (432 MHz equivalent in Quad SPI) Page size: 2,048 + 64 […]
- Memory, SLC NAND
GSE128AAE4-F5V5C0 – GSTO eMMC5.1 128 GB HS400 flash (270 MB/s read, 240 MB/s write, LDPC ECC, wear leveling, –25 °C to +85 °C operation) Key Features JEDEC e.MMC 5.1 compliant; backward-compatible with v4.5–v5.1 Sequential speeds: up to 270 MB/s read, 240 MB/s write (HS400 mode) Random performance: 4,200 IOPS read / 2,700 IOPS write Bus […]
- eMMC, Memory
GSE32GAABI-F5V5C0 – GSTO eMMC5.1 32 GB HS400 flash (280 MB/s read, 150 MB/s write, LDPC ECC, wear leveling, –25 °C to +85 °C operation) Key Features JEDEC e.MMC 5.1 HS400 interface, backward-compatible with v4.5–v5.1 Sequential performance: up to 280 MB/s read, 150 MB/s write Random IOPS: up to 4,400 read / 2,400 write Bus width […]
- eMMC, Memory
GSD04GHFB4-E3N3C0 – GSTO DDR3 4 GB 1600 MT/s DRAM module (x8 organization, 1.5 V, CL11 latency, industrial-grade reliability, 30 µ gold plating, –40 °C to +85 °C) Key Features JEDEC-compliant DDR3 SDRAM, 4 GB capacity Data rate: 1600 MT/s (DDR3-1600) Organization: 512M × 8 × 8 banks (x8) CAS latency: 11-11-11 Voltage: 1.5 V ±0.075 V 30 […]
- DRAM Module, Memory